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6 FAQs about N-type battery cabinet encloses heterojunction

Can n-n semiconductor heterojunction separate the exciton in a solar cell?

Carrier separation in a solar cell usually relies on the p–n junction. Here we show that an n–n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications. The n–n type heterojunction was formed by hydrothermal deposition of Sb 2 (S,Se) 3 and thermal evaporation of Sb 2 Se 3.

How is n-n type heterojunction formed?

The n–n type heterojunction was formed by hydrothermal deposition of Sb 2 (S,Se) 3 and thermal evaporation of Sb 2 Se 3. We found that the n–n junction is able to enhance the carrier separation by the formation of an electric field, reduce the interfacial recombination and generate optimized band alignment.

What are the different types of n-type cell technology?

N-type cell technology can be subdivided into heterojunction (HJT), TOPCon, IBC and other technology types. Currently, PV cell manufacturers mostly choose TOPCon or HJT to pursue mass production. The theoretical efficiency of N-type TOPCon cells can reach 28.7%, and the theoretical efficiency of heterojunction cells can reach 27.5%.

What are the different types of defects in n-n heterojunction based devices?

Obviously, the two devices exhibit different types of defects. There are three kinds of electron trap states detected in the n–n heterojunction-based device, which are denoted as E1, E2, and E3 (donor defects), respectively. The corresponding energy levels (ET) are 0.237 eV, 0.560 eV and 0.774 eV below the conduction band edge (CBE).

Does n n heterojunction increase the internal electrical field?

The Vbi of the SbSSe control device and SbSSe-SbSe device are 0.527 V and 0.676 V, respectively. This result is in good agreement with the VOC changes, indicating that the n–n heterojunction between Sb 2 (S,Se) 3 and Sb 2 Se 3 increases the internal electrical field.

Does SB 2 (SE) 3 form a heterojunction?

Interestingly, Sb 2 (S,Se) 3 and Sb 2 Se 3 form a heterojunction, instead of the formation of gradient light harvesting layer. This n–n type heterojunciton is found to generate highly efficient carrier separation and in turn high power conversion efficiency (PCE).

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